C6D20065G-TR

Overview

The C6D20065G-TR is a 6th generation 650 V Silicon Carbide Schottky diode in a TO-263-2 surface-mount package. It features a maximum continuous forward current of 20 A at 150 °C and 64 A at 25 °C. The device exhibits a typical forward voltage of 1.27 V at 25 °C and 1.37 V at 175 °C when conducting 20 A. Reverse leakage current is specified as 30 µA max at 25 °C and 300 µA max at 175 °C under 650 V reverse bias. Thermal resistance from junction to case is typically 0.76 °C/W, supporting operation within a -55 °C to +175 °C junction temperature range.

Feature Summary

• Zero reverse recovery charge and forward recovery voltage for fast switching operations
• Low forward voltage drop with positive temperature coefficient
• Temperature-independent switching behavior
• Low leakage current

Applications

• Industrial power supplies
• Uninterruptible & auxiliary power supplies
• Switch mode power supplies
• Solar inverters
• Power factor correction
• Server/telecom power supplies

Procurement Notes

Verify the specific ordering suffix '-TR' corresponds to tape and reel packaging rather than tube configuration. Confirm RoHS and REACh compliance documentation availability through official Wolfspeed channels prior to procurement. Ensure design validation accounts for the manufacturer's disclaimer regarding critical applications and liability limitations.

Selection Notes

Select this component for high-frequency power conversion designs requiring low conduction losses and zero reverse recovery charge. The TO-263-2 package facilitates automated surface-mount assembly. Evaluate thermal management requirements based on the 0.76 °C/W junction-to-case resistance and derating curves provided in the datasheet for target operating temperatures.

Part Context

This discrete silicon carbide Schottky barrier diode belongs to Wolfspeed’s 6th generation product family. It is designed to replace silicon-based solutions in power electronics systems to achieve higher efficiency standards and increased power densities. The technology allows for easy paralleling without thermal runaway concerns, supporting diverse application demands.

Replacement Considerations

The datasheet indicates direct drop-in replacement capability for current silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface specifications when substituting legacy components.

FAQ

Does the C6D20065G exhibit reverse recovery charge?

No, as a majority carrier device, it has zero reverse recovery charge.

What is the maximum junction temperature rating?

The maximum junction temperature is +175 °C.