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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 64A TO2632
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：64A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：30 µA @ 650 V
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The C6D20065G is a 6th Generation Silicon Carbide Schottky Barrier diode rated for 650 V repetitive peak reverse voltage and 64 A continuous forward current at 25°C case temperature. It utilizes a TO-263-2 surface-mount package with a typical thermal resistance of 0.76 °C/W from junction to case. The device exhibits a maximum forward voltage of 1.50 V at 20 A and 25°C, alongside a total capacitive charge of 62 nC at 400 V reverse bias.
Feature Summary
- Zero reverse recovery current and forward recovery voltage due to majority carrier operation
- Low forward voltage drop with a positive temperature coefficient
- Temperature-independent switching behavior
- Low leakage current characteristics
Applications
- Industrial Power Supplies
- Uninterruptible & AUX Power Supplies
- Switch Mode Power Supplies
- Solar Inverters
- Power Factor Correction
- Server/Telecom Power Supplies
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard part number C6D20065G is supplied in a tube container. An alternative tape and reel option exists under the suffix -TR. Confirm compliance documentation availability for REACh, RoHS, and Halogen-Free requirements directly with the manufacturer or authorized distributors prior to finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high-frequency operation and reduced cooling requirements compared to silicon solutions. The device supports easy paralleling without thermal runaway concerns. Ensure the application operates within the specified junction temperature range of -55°C to +175°C and adheres to the derating curves provided for continuous current and power dissipation limits.
Part Context
This discrete SiC Schottky diode belongs to Wolfspeed's 6th Generation product family. It is designed to replace silicon diodes in diverse applications, offering higher efficiency standards and improved thermal performance. The technology enables lower overall system costs through reduced cooling needs and increased power density capabilities.
Replacement Considerations
The datasheet identifies this component as a direct drop-in replacement for current silicon diodes and other silicon carbide diodes. No specific substitute part numbers are documented in the official source material.
FAQ
Does the C6D20065G exhibit reverse recovery charge?
No, as a Silicon Carbide Schottky diode utilizing majority carrier devices, it has zero reverse recovery charge.
What is the maximum junction temperature rating?
The maximum junction temperature (Tj) rating is +175°C.
