C6D50065D1

Overview

The Wolfspeed C6D50065D1 is a 6th Generation 650 V Silicon Carbide Schottky Barrier diode housed in a TO-247-3 package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 136 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.30 V at 50 A and 25°C, with a maximum reverse current of 100 µA under rated conditions. Thermal resistance from junction to case is typically 0.37 °C/W, supporting operation within a junction temperature range of -55°C to +175°C.

Feature Summary

• Low forward voltage drop with a positive temperature coefficient for stable operation
• Zero reverse recovery current and forward recovery voltage due to majority carrier conduction
• Temperature-independent switching behavior ensuring consistent performance across thermal ranges
• Low leakage current characteristics enhancing efficiency in high-voltage applications

Applications

• Industrial Power Supplies
• Battery Charging Systems
• Switch Mode Power Supplies
• Solar Inverters
• Server/Telecom Power Supplies

Procurement Notes

Verify the specific ordering suffix and packing type against the manufacturer's current product documentation before procurement. Confirm that the component meets required RoHS and REACh compliance standards for your region. Ensure that thermal management designs account for the specified junction-to-case thermal resistance values to maintain reliability within the stated operating temperature limits.

Selection Notes

Select this component when high-frequency switching and high power density are required in silicon carbide applications. The zero reverse recovery charge eliminates switching losses associated with minority carrier storage. Consider the positive temperature coefficient of the forward voltage for safe parallel operation without active current balancing. Evaluate the thermal derating curves to ensure adequate heat sinking for the intended ambient and case temperatures.

Part Context

This device belongs to Wolfspeed's 6th Generation Silicon Carbide Schottky Diode family. These components are designed to replace traditional silicon PN junction diodes in high-efficiency power conversion systems. The technology leverages wide bandgap properties to achieve higher breakdown voltages and superior thermal conductivity compared to conventional silicon solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source datasheet. Engineers should consult Wolfspeed directly or authorized distributors for qualified alternative components that match the electrical specifications and package dimensions.

FAQ

Does the C6D50065D1 exhibit reverse recovery charge?

No, as a Silicon Carbide Schottky diode, it is a majority carrier device and has no reverse recovery charge.

What is the maximum junction temperature for this diode?

The maximum junction temperature (Tj) is +175°C.

Can multiple units be paralleled safely?

Yes, SiC diodes can be easily paralleled without concern for thermal runaway due to their positive temperature coefficient.