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The C8051F912-GDI is a die-in-wafer form mixed-signal microcontroller based on the high-speed 8051 core, operating at up to 25 MIPS. It features 16 kB of in-system programmable Flash and 768 bytes of RAM. The device supports a supply voltage range of 0.9 V to 3.6 V, utilizing a built-in DC-DC converter for single-cell battery applications. Key analog peripherals include a 12/10-bit ADC with throughput up to 300 ksps, two comparators, and a temperature sensor. Digital interfaces comprise SMBus, dual SPI, and UART ports alongside 16 port I/Os.
This component is supplied as a wafer containing multiple dies rather than individual packaged units. Verification must confirm the specific wafer thickness variant, either backgrinded to 12 mil or standard 28.54 mil. Ensure that manufacturing capabilities exist for die bonding and wire bonding to compatible QFN-24 footprints. Contact the manufacturer directly for die yield information and wafer jar packaging details prior to ordering.
Select this part when system design requires custom package integration or bare die mounting to minimize footprint. Verify compatibility with the target substrate and wire bonding processes. The GDI suffix specifically denotes the wafer form factor; ensure the design accommodates the necessary handling procedures for unencapsulated silicon. Confirm that the 12 mil backgrind option meets thermal and mechanical constraints if selected.
The C8051F912-GDI belongs to the C8051F9xx family of ultra-low power mixed-signal microcontrollers from Silicon Labs. This family is characterized by its ability to operate at voltages as low as 0.9 V, making it suitable for battery-powered applications. The GDI designation indicates the device is provided in wafer form, allowing for flexible packaging solutions by the end-user or contract manufacturer.
The datasheet lists C8051F912-D-G1DI as an alternative wafer variant with a different thickness (no backgrind). No other direct functional substitutes are documented in the provided text.