C8051F912-GDI

C8051F912-GDI

  • Description:IC MCU 8BIT 16KB FLASH DIE
  • Series:C8051F9xx
  • Mfr:Silicon Labs
  • Package:Bulk
  • Core Processor:8051

SKU:8e8243185415 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC MCU 8BIT 16KB FLASH DIE
  • Series:C8051F9xx
  • Mfr:Silicon Labs
  • Package:Bulk
  • Core Processor:8051
  • Core Size:8-Bit
  • Speed:25MHz
  • Connectivity:SMBus (2-Wire/I2C), SPI, UART/USART
  • Peripherals:Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
  • Number of I/O:16
  • Program Memory Size:16KB (16K x 8)
  • Program Memory Type:FLASH
  • EEPROM Size:-
  • RAM Size:768 x 8
  • Voltage - Supply (Vcc/Vdd):0.9V ~ 3.6V
  • Data Converters:A/D 15x10/12b
  • Oscillator Type:Internal
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Supplier Device Package:Die
  • Package / Case:Die

Download product information

C8051F912-GDI

Overview

The C8051F912-GDI is a die-in-wafer form mixed-signal microcontroller based on the high-speed 8051 core, operating at up to 25 MIPS. It features 16 kB of in-system programmable Flash and 768 bytes of RAM. The device supports a supply voltage range of 0.9 V to 3.6 V, utilizing a built-in DC-DC converter for single-cell battery applications. Key analog peripherals include a 12/10-bit ADC with throughput up to 300 ksps, two comparators, and a temperature sensor. Digital interfaces comprise SMBus, dual SPI, and UART ports alongside 16 port I/Os.

Feature Summary

  • Ultra-low power architecture supporting sleep modes down to 10 nA with memory retention
  • Integrated DC-DC converter enabling operation from a single lithium cell (0.9 V)
  • High-resolution analog-to-digital conversion with programmable gain amplifier
  • On-chip debug circuitry facilitating full-speed non-intrusive in-system debugging

Applications

  • Tested single or dual battery powered systems
  • Custom embedded system integration requiring bare die assembly
  • Low-power sensor nodes utilizing SmaRTClock real-time clock functionality

Procurement Notes

This component is supplied as a wafer containing multiple dies rather than individual packaged units. Verification must confirm the specific wafer thickness variant, either backgrinded to 12 mil or standard 28.54 mil. Ensure that manufacturing capabilities exist for die bonding and wire bonding to compatible QFN-24 footprints. Contact the manufacturer directly for die yield information and wafer jar packaging details prior to ordering.

Selection Notes

Select this part when system design requires custom package integration or bare die mounting to minimize footprint. Verify compatibility with the target substrate and wire bonding processes. The GDI suffix specifically denotes the wafer form factor; ensure the design accommodates the necessary handling procedures for unencapsulated silicon. Confirm that the 12 mil backgrind option meets thermal and mechanical constraints if selected.

Part Context

The C8051F912-GDI belongs to the C8051F9xx family of ultra-low power mixed-signal microcontrollers from Silicon Labs. This family is characterized by its ability to operate at voltages as low as 0.9 V, making it suitable for battery-powered applications. The GDI designation indicates the device is provided in wafer form, allowing for flexible packaging solutions by the end-user or contract manufacturer.

Replacement Considerations

The datasheet lists C8051F912-D-G1DI as an alternative wafer variant with a different thickness (no backgrind). No other direct functional substitutes are documented in the provided text.

C8051F912-GDIC8051F912-GDI

Click on the inquiry