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The CA3083MZ is a general-purpose high-current NPN transistor array manufactured by Renesas Electronics Corporation. It integrates five independent transistors on a common monolithic substrate within a 16-lead SOIC package. The device supports collector currents up to 100mA and operates across a temperature range of -55°C to 125°C. Two internal transistors, Q1 and Q2, are matched at low current for critical offset applications. Key electrical specifications include a maximum collector-to-emitter breakdown voltage of 15V, a gain bandwidth product of 450MHz, and a maximum saturation voltage of 0.7V at 50mA.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and compliance status. The CA3083MZ designation indicates a lead-free version in a 16-lead SOIC package. Confirm that the procurement source provides valid traceability data and matches the exact part marking specified in the datasheet to avoid counterfeit components.
Select this component when circuit design requires multiple high-current NPN transistors sharing a common substrate. The integrated matched pair is suitable for precision differential stages where offset parameters are critical. Ensure the application respects the absolute maximum ratings, particularly the collector-to-substrate voltage isolation requirements and thermal dissipation limits for the SOIC package.
The CA3083 series consists of versatile NPN transistor arrays designed for flexible circuit implementation. The CA3083MZ variant specifically utilizes a surface-mount SOIC package. This family allows designers to consolidate multiple discrete transistors into a single component, reducing board space while maintaining independent control over each transistor element through dedicated terminals.
Direct replacements include the CA3083Z (Pb-free PDIP), CA3083M96 (SOIC Tape and Reel), and CA3083MZ96 (Pb-free SOIC Tape and Reel). Verify pinout compatibility and package dimensions before substitution. Cross-reference with other manufacturers' equivalent transistor arrays if form-factor changes are acceptable.