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The CA3083Z is a general-purpose high current NPN transistor array manufactured by Renesas Electronics Corporation, formerly Intersil. It integrates five independent NPN transistors on a common monolithic substrate, with Q1 and Q2 matched for low-current offset parameters. The device supports a maximum collector current of 100mA per transistor and operates within a temperature range of -55°C to 125°C. Key electrical specifications include a collector-to-emitter breakdown voltage of 15V, a DC forward-current transfer ratio (hFE) ranging from 40 to 76 at 10mA, and a gain bandwidth product of 450MHz. The absolute input offset voltage between the matched pair is limited to 5mV.
Verify that the specific order corresponds to the CA3083Z suffix, which indicates a 16-lead PDIP package. Confirm that the component meets RoHS compliance requirements if lead-free processing is necessary. Ensure handling procedures account for electrostatic discharge sensitivity during installation. Check datasheet notes regarding through-hole wave soldering limitations for Pb-free PDIP variants.
Select this component when a circuit requires multiple discrete NPN transistors with shared thermal characteristics. The integrated matched pair simplifies differential amplifier design by reducing external matching requirements. Consider the separate substrate connection for applications requiring strict isolation between individual transistor collectors. Evaluate the 100mA current capability against load requirements to ensure operation within safe limits.
The CA3083 belongs to a family of general-purpose high current NPN transistor arrays originally developed by Intersil Corporation. This series provides a compact solution for replacing multiple discrete components in analog and switching applications. The CA3083Z variant specifically denotes the plastic dual in-line package version available in lead-free manufacturing processes.
Public confirmed substitute part numbers include CA3083M96 and CA3083MZ.