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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 29A TO2522L
- Series：-
- Mfr：Bruckewell
- Package：Cut Tape (CT),Tape & Box (TB)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：29A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 8 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：25 µA @ 650 V
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252-2L
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The CBR08P65D is a Silicon Carbide (SiC) Schottky Diode manufactured by Bruckewell Technology Corporation. It features a TO252-2L package and supports a maximum repetitive reverse voltage of 650 V. The device handles a maximum average forward rectified current of 29 A at a case temperature of 25°C, with an avalanche rating of 67 mJ. It operates within a junction temperature range of -55°C to 175°C and exhibits a maximum junction-to-case thermal resistance of 1.5 °C/W.
Feature Summary
- Positive temperature coefficient ensures safe operation and facilitates ease of paralleling multiple units.
- Extremely fast switching characteristics that remain independent of temperature variations.
- Absence of reverse or forward recovery charge eliminates associated switching losses.
Applications
- High frequency rectifier circuits in switching mode power supplies
- Freewheeling diodes in DC-to-DC converters
- Industrial motor drive systems
- Power factor correction modules
Procurement Notes
Verify the component against the official Bruckewell datasheet publication order number CBR08P65D Rev. A-2021. Confirm the TO252-2L package dimensions and marking match the provided specifications. Ensure compliance with RoHS requirements as stated in the documentation. Validate that the specific batch meets the electrical characteristics for your operating conditions.
Selection Notes
Select this component for applications requiring high-frequency operation and minimal reverse recovery losses. The positive temperature coefficient aids in thermal management when paralleling devices. Consider the 650 V rating and 29 A current capacity relative to your circuit's peak demands. Evaluate the thermal resistance and junction temperature limits for your specific heat sinking strategy.
Part Context
This SiC Schottky Diode belongs to Bruckewell's power semiconductor lineup designed for high-efficiency energy conversion. It utilizes silicon carbide technology to achieve superior performance compared to traditional silicon diodes. The component is intended for robust industrial and automotive-grade environments, offering enhanced surge capability and reliability under harsh operating conditions.
Replacement Considerations
No public confirmed substitute part numbers are documented in the source material.
FAQ
Does the CBR08P65D exhibit reverse recovery charge?
No, the datasheet specifies that the device has no reverse or forward recovery.
What is the maximum avalanche energy rating?
The component is avalanche rated at 67 mJ, tested based on TJ=25°C, L=1.0mH, IAS=11.58A, and V=50V.
