CBR10P65HL

Overview

The CBR10P65HL is a Silicon Carbide Schottky diode manufactured by Bruckewell Technology Corporation. It features a maximum repetitive reverse voltage of 650 V and a maximum average forward rectified current of 30 A at a case temperature of 25°C, reducing to 10 A at 150°C. The device supports a peak forward surge current of 85 A at 25°C and operates within a junction temperature range of -55°C to 175°C. Electrical characteristics include a typical instantaneous forward voltage of 1.5 V at 10 A and 25°C, with a maximum reverse current of 25 μA at 650 V and 25°C. The component is housed in a DFN 8x8 package.

Feature Summary

• Positive temperature coefficient for safe operation and ease of paralleling
• Extremely fast switching behavior that is independent of temperature
• No reverse or forward recovery charge
• Enhanced surge capability with avalanche rating

Applications

• High frequency rectifier of switching mode power supplies
• Freewheeling diodes
• DC-to-DC converters
• Industrial motor drives
• Power factor correction modules

Procurement Notes

Verify the specific revision status and datasheet version when sourcing this component, as product specifications are subject to change without notice. Confirm that the received units match the DFN 8x8 package dimensions and marking requirements specified in the official documentation. Ensure thermal management designs account for the maximum junction temperature limits and thermal resistance ratings provided in the electrical characteristics table.

Selection Notes

Select this component for applications requiring high-frequency switching and low reverse recovery losses. The positive temperature coefficient facilitates parallel operation for higher current handling. Consider the thermal derating curve when determining current capacity at elevated case temperatures. Verify that the 650 V reverse voltage rating provides sufficient margin for the specific circuit operating conditions.

Part Context

This silicon carbide Schottky diode belongs to the high-performance power semiconductor category designed for efficient energy conversion. Utilizing a wide bandgap material allows for lower forward voltage drop and negligible reverse recovery compared to traditional silicon devices. The technology supports compact system designs through reduced heat dissipation requirements and improved switching speeds in hard-switching environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.