CBR20120PC

Overview

The CBR20120PC is a silicon carbide Schottky diode manufactured by Bruckewell Technology Corporation. It features a maximum repetitive reverse voltage of 1200 V and a maximum average forward rectified current of 20 A at a case temperature of 25°C, or 10 A at 100°C. The device operates within a junction and storage temperature range of -55°C to 175°C. Electrical characteristics include an instantaneous forward voltage of 1.5 V typical at 10 A and 25°C, with a maximum reverse current of 100 μA at 1200 V and 25°C. The component utilizes a TO-220-3L package.

Feature Summary

• Positive temperature coefficient ensures safe operation and facilitates ease of paralleling multiple devices.
• Extremely fast switching behavior that remains independent of temperature variations.
• No reverse or forward recovery characteristics are present during operation.
• Enhanced surge capability provides robustness against transient electrical phases.

Applications

• High frequency rectifier circuits in switching mode power supplies
• Freewheeling diodes in power conversion systems
• DC-to-DC converters for efficient energy transfer
• Industrial motor drive applications requiring high reliability
• Power factor correction modules for improved efficiency

Procurement Notes

Verify the specific datasheet revision (Rev. A -2021) when sourcing components to ensure alignment with published specifications. Confirm thermal management requirements align with the stated junction-to-case thermal resistance ratings. Validate that the TO-220-3L package dimensions meet your PCB layout constraints. Ensure compliance with RoHS standards as indicated in the product marking. Cross-reference absolute maximum ratings against your system's peak operating conditions to prevent overstress.

Selection Notes

Select this component for applications demanding high-voltage blocking capabilities up to 1200 V combined with low forward voltage drop characteristics. The silicon carbide substrate enables superior heat transfer compared to conventional silicon devices. Consider the positive temperature coefficient when designing parallel configurations to ensure balanced current sharing. Evaluate the thermal resistance values to determine appropriate heatsinking strategies for maintaining junction temperatures within the specified 175°C limit under varying load conditions.

Part Context

This silicon carbide Schottky diode belongs to the category of wide band-gap power semiconductors designed for high-efficiency power electronics. Manufactured by Bruckewell Technology Corporation, it represents a discrete semiconductor solution optimized for harsh environments. The technology leverages silicon carbide material properties to achieve minimal capacitive turn-off behavior and negligible ringing patterns, distinguishing it from traditional silicon rectifiers in high-frequency switching scenarios.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics if considering alternative manufacturers' silicon carbide diodes with similar 1200 V ratings. Ensure any replacement maintains the TO-220-3L package form factor for direct board integration without redesign.

FAQ

Does the CBR20120PC exhibit reverse recovery charge?

No, the device exhibits no reverse or forward recovery due to its Schottky construction, resulting in negligible ringing patterns.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C, allowing for reliable performance in high-temperature environments.

How does the forward voltage change with temperature?

The forward voltage increases with temperature; it is typically 1.5 V at 25°C and rises to 2.2 V at 175°C when conducting 10 A.