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CBRDFSH1-100 TR13 is listed in the Bridge Rectifier range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is BRIDGE RECT 1P 100V 1A 4-BR DFN. Review the specifications below when checking this part for your BOM.
The Central Semiconductor CBRDFSH1-100 TR13 PBFREE is a surface mount Schottky bridge rectifier rated for 1.0 A average forward current and 100 V peak repetitive reverse voltage. It utilizes glass passivated chips within a BR DFN case. Key electrical parameters include a maximum reverse leakage current of 200 µA at 100 V, a typical forward voltage of 800 mV at 1.0 A, and a peak forward surge current capability of 30 A. The device supports an operating junction temperature range from -55 °C to +100 °C under continuous power rating conditions.
Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The standard configuration typically denotes lead-free compliance, while alternative suffixes may indicate tin/lead plating requirements. Confirm reel packaging specifications match production line equipment capabilities before finalizing procurement orders.
Select this component when low forward voltage drop is critical for efficiency in 100 V applications. Ensure the thermal design accommodates the specified junction temperature limits. Verify that the BR DFN footprint matches the target PCB layout dimensions and pad configurations provided in the mechanical outline datasheet.
This part belongs to the CBRDFSH1 series of 1.0 Amp silicon Schottky bridge rectifiers. The series includes variants with different voltage ratings, specifically the CBRDFSH1-40 (40 V) and CBRDFSH1-60 (60 V), alongside the 100 V rated CBRDFSH1-100. All share identical physical packaging and general structural characteristics.
Direct substitutes must match the 1.0 A current rating, 100 V reverse voltage, and BR DFN package type. Verify compatibility regarding forward voltage characteristics and thermal resistance values to ensure equivalent performance in the existing circuit design.
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