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The CBS05F30,L3F is a single Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. It features a maximum repetitive peak reverse voltage (VRRM) of 30 V and an average forward rectified current (IO) of 0.5 A. The device utilizes a CST2B surface-mount package. Key electrical parameters include a maximum DC forward voltage (VF) of 550 mV at 500 mA, a maximum reverse leakage current (IR) of 50 µA at 30 V, and a maximum forward surge current (IFSM) of 3 A. The operating junction temperature range extends from -55 °C to +150 °C.
Verify the complete part number including the suffix L3F to ensure correct packaging configuration. Confirm RoHS compliance status as specified in the official datasheet. Check moisture sensitivity level (MSL) ratings prior to storage and handling to prevent package damage during soldering processes.
Select this component when a compact surface-mount Schottky diode is required for low-voltage applications. Ensure the 30 V reverse voltage rating exceeds the maximum circuit peak inverse voltage. Verify that the 0.5 A current capacity meets the load requirements and that the CST2B footprint matches the PCB layout constraints.
This component belongs to Toshiba's series of small-signal Schottky barrier diodes designed for high-efficiency rectification. The CST2B package provides a compact solution suitable for space-constrained printed circuit boards. These devices are engineered to minimize power loss through reduced forward voltage characteristics compared to standard PN junction diodes.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 30 V/0.5 A specifications and CST2B package dimensions. Verify equivalent switching speed and thermal performance characteristics before implementation.