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Product Detailed Parameters
- Description：DIODE SCHOTTKY 40V 1A CST2B
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：40 V
- Current - Average Rectified (Io)：1A
- Voltage - Forward (Vf) (Max) @ If：700 mV @ 1 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 µA @ 40 V
- Capacitance @ Vr, F：74pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：2-SMD, No Lead
- Supplier Device Package：CST2B
- Operating Temperature - Junction：150°C (Max)
- Grade：-
- Qualification：-
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Overview
The CBS10F40,L3F is a signal Schottky barrier diode manufactured by Toshiba. It features a single configuration and utilizes SMD/SMT surface-mount technology for circuit integration. The component is designed for high-speed switching applications, leveraging the inherent properties of Schottky junctions to minimize reverse recovery time and forward voltage drop. It operates within standard industrial temperature ranges and complies with RoHS directives for environmental safety.
Feature Summary
- Schottky barrier construction for fast switching performance
- Single diode configuration for compact circuit design
- Surface-mount package suitable for automated assembly
Applications
- High-frequency rectification circuits
- DC-DC converter output stages
- Free-wheeling diodes in inductive load protection
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact packaging and tape-and-reel specifications. Ensure that the component meets the required automotive or industrial qualification standards if applicable to the target application environment before finalizing procurement.
Selection Notes
Select this component when low forward voltage drop and rapid switching speeds are critical requirements. Consider the surface-mount package constraints and thermal dissipation capabilities relative to the expected current load. Validate compatibility with existing PCB footprint designs and soldering profiles during the selection phase.
Part Context
This device belongs to Toshiba's discrete semiconductor portfolio, specifically within the Schottky diode category. It serves as a specialized component for power management and signal processing applications where efficiency and speed are prioritized over high-voltage blocking capabilities typical of standard PN junction diodes.
Replacement Considerations
Consult official cross-reference guides for equivalent Schottky barrier diodes with matching voltage ratings and current capacities. Verify pinout compatibility and thermal characteristics before substituting with alternative manufacturers' components.
