CCS15S30,L3IDTF

Overview

The CCS15S30 is a Schottky Barrier Diode Silicon Epitaxial manufactured by Toshiba Semiconductor and Storage. It features a peak reverse voltage of 30 V, a maximum average rectified current of 1.5 A, and a non-repetitive peak forward surge current of 5 A. The device exhibits a typical forward voltage of 0.33 V at 1 A and a maximum of 0.40 V. Reverse leakage current is typically 0.2 mA at 30 V. Total capacitance is 200 pF at 0 V reverse bias and 1 MHz frequency. The junction temperature range extends from -55 °C to 125 °C, with storage temperatures spanning the same range.

Feature Summary

• Low forward voltage for efficient power conversion
• High-speed switching capability
• Silicon epitaxial construction

Applications

• High-speed switching circuits

Procurement Notes

Verify the specific ordering suffix L3IDTF against official Toshiba documentation to confirm package type and marking details. Ensure compliance with RoHS directives and export regulations before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions to maintain component reliability under operational stress.

Selection Notes

Select this component for applications requiring low forward voltage drop and high-speed rectification. Consider thermal design carefully due to higher reverse leakage currents inherent to Schottky barrier diodes. Evaluate both forward and reverse power losses to prevent thermal runaway in high-temperature or high-voltage environments.

Part Context

This part belongs to the single Schottky barrier diode category within Toshiba's discrete semiconductor product line. It utilizes the CST2C package (Toshiba designation 1-1W1S). Commercial production started in July 2013. The device is designed for surface mount applications on FR4 boards.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.