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The CCS15S30 is a silicon epitaxial Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. It features a CST2C surface-mount package with an average rectified current rating of 1.5 A and a peak reverse voltage of 30 V. The device exhibits a typical forward voltage of 0.33 V at 1 A pulse test conditions, ensuring low conduction losses. Electrical characteristics include a maximum reverse current of 0.5 mA at 30 V and a total capacitance of 200 pF at 0 V reverse bias and 1 MHz frequency. The junction temperature range extends from -55 °C to 125 °C.
Verify the specific ordering suffix L3QUF against official Toshiba documentation to confirm packaging details such as reel quantity or tape specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the component status remains active for new designs, as availability may vary by distribution channel.
Select this component when low forward voltage drop is critical for efficiency in high-frequency switching environments. Consider the 30 V reverse voltage rating and 1.5 A current capacity relative to circuit load requirements. Account for thermal management needs due to potential reverse leakage currents inherent to Schottky barrier diodes under high-temperature conditions.
This component belongs to Toshiba's discrete semiconductor product line, specifically within the Schottky Barrier Diode category. It utilizes the CST2C package, also known as nickname CST2C, which is a compact surface-mount form factor suitable for dense PCB layouts. The part was commercially produced starting in July 2013.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba sales representatives or authorized distributors for verified equivalent components if direct replacement is required.
The typical forward voltage (VF) is 0.33 V when tested with a 1 A pulse current.
Yes, the device supports a junction temperature range up to 125 °C, though thermal design must account for increased reverse leakage currents typical of Schottky diodes.