CD2810V

Overview

The CD2810V is a silicon dioxide passivated Schottky barrier diode chip manufactured by Microchip Technology. It features a maximum DC reverse voltage of 15 V and an average rectified current of 35 mA. The forward voltage is specified as 1 V at 35 mA, with a reverse leakage current of 100 nA at 15 V. Junction capacitance is 1.2 pF at 0 V and 1 MHz. The device operates within a junction temperature range of -55°C to 125°C and is designed for surface mount die applications.

Feature Summary

• Silicon dioxide passivation for enhanced reliability
• Compatible with standard wire bonding and die attach techniques
• General purpose Schottky barrier design

Applications

• General purpose electronic circuits
• Wire bonding interconnects
• Die attach assemblies

Procurement Notes

Verify the specific suffix or revision code against the official Microchip Technology datasheet to ensure compatibility with your assembly process. Confirm that the component meets all required environmental standards and performance specifications for your intended application before finalizing procurement decisions.

Selection Notes

Select this component when a small-signal Schottky diode with low forward voltage drop and minimal reverse leakage is required in a bare die format. Ensure your PCB layout supports direct die attachment or wire bonding processes compatible with the specified package type and thermal characteristics.

Part Context

This part belongs to the Microchip Technology Schottky Diodes & Rectifiers category. It is a small-signal device suitable for general-purpose applications requiring high-speed switching characteristics. The component is distinct from larger packaged diodes due to its die form factor.

Replacement Considerations

Publicly confirmed substitute part numbers include CD5711 and CD5712, which are available in JANHC and JANKC formats per MIL-PRF-19500 standards. Verify electrical parameters and physical dimensions before substitution.