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The CD5711V is a single silicon Schottky barrier diode die manufactured by Microchip Technology. It features a maximum repetitive reverse voltage of 50 V and a forward current rating of 15 mA. The device exhibits a typical forward voltage of 1 V and a reverse current of 200 nA. Designed for surface mount integration, it operates within a temperature range of -65°C to +150°C. This component belongs to the metallurgically bonded 33mA Schottky family, offering military-grade qualifications suitable for high-reliability applications.
Verify the specific suffix (e.g., V) against official datasheets to confirm die format and packaging. Ensure compatibility with existing substrate materials due to the bare die nature. Confirm military grade requirements align with project specifications before procurement.
Select this component when a ruggedized, surface-mountable Schottky diode is required for space-constrained designs. Compare electrical parameters such as forward voltage and reverse leakage against system limits. Consider the metallurgical bonding benefits for thermal cycling resilience in harsh environments.
This part belongs to Microchip's specialized Schottky diode family characterized by metallurgical bonding. It shares core electrical characteristics with other variants in the series but differs in physical form factor. The die format allows for custom mounting solutions in advanced packaging architectures.
Direct substitutes include CD5712V or CD5711 depending on voltage requirements. Verify pinout and thermal dissipation capabilities when replacing with similar die formats from other manufacturers.