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The CD5819 is a Schottky barrier diode bare die manufactured by Microchip Technology. It features a maximum DC reverse voltage of 40 V and an average rectified forward current of 1 A. The device exhibits a maximum forward voltage of 600 mV at 1 A and a maximum reverse leakage current of 100 µA at 40 V. Operating within a junction temperature range of -65°C to +175°C, it is designed for surface-mount integration in high-reliability applications requiring low power loss and fast switching characteristics.
Verify the specific datasheet revision and qualification status (e.g., MIL-PRF-19500) required for your application. Confirm that the bare die form factor aligns with your assembly capabilities, as standard discrete handling methods do not apply. Ensure compliance with relevant reliability standards before procurement.
Select this component when a bare die Schottky diode is required for custom hybrid or monolithic integrated circuits. It is suitable for designs prioritizing low forward voltage and high thermal stability over standard packaged alternatives. Evaluate bonding and mounting requirements carefully due to the exposed die configuration.
This part belongs to Microchip's small-signal Schottky diode family, specifically offered as a bare die variant. Unlike packaged equivalents such as the CDLL5819, the CD5819 lacks external casing, allowing direct integration into substrates or multi-chip modules for space-constrained or high-performance applications.
Direct functional substitutes include other bare die Schottky diodes from Microchip or compatible manufacturers meeting identical 40V/1A specifications. Packaged equivalents like the CDLL5819 require additional PCB space and may not fit custom substrate layouts.