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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 10A DPAK
- Series：-
- Mfr：Comchip Technology
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 650 V
- Capacitance @ Vr, F：690pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The CDBDSC10650-G is a Silicon Carbide (SiC) Schottky diode rated for 650V repetitive reverse voltage and 10A forward current. It utilizes a TO-252-3 (DPAK) surface-mount package with a tab for thermal management. Key electrical parameters include a maximum forward voltage of 1.7V at 10A, a peak forward surge current of 100A, and a maximum reverse leakage current of 20µA. The device operates within a junction temperature range of -55°C to +175°C and dissipates up to 109W of power.
Feature Summary
- Utilizes Silicon Carbide technology for high-speed switching capabilities
- Features short recovery time and temperature-independent switching characteristics
- Provides robust rectification suitable for demanding power systems
Applications
- High-frequency power conversion circuits
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
Procurement Notes
Verify the specific package type upon ordering, as datasheets may list both TO-220-2 and TO-252-3 variants under similar naming conventions. Confirm RoHS compliance status and ensure the supplier provides the official Comchip Technology datasheet for the exact suffix. Cross-reference the part number with manufacturer change notifications to verify component revisions.
Selection Notes
Select this component for applications requiring low reverse recovery charge and high thermal stability. The SiC material offers superior performance over silicon in high-temperature environments. Ensure the PCB layout supports the DPAK footprint and adequate heat sinking is available to manage the 109W power dissipation rating effectively during operation.
Part Context
This component belongs to the CDB series of Silicon Carbide Schottky diodes manufactured by Comchip Technology. The series is designed to replace traditional silicon rectifiers in high-efficiency power electronics. The CDBDSC10650-G specifically targets surface-mount applications where space constraints and thermal performance are critical design factors.
Replacement Considerations
The CDBJSC10650-G is a related variant but uses a TO-220-2 through-hole package rather than the surface-mount DPAK form factor. Direct substitution requires verifying mechanical fit and thermal interface compatibility. No other direct pin-compatible substitutes are confirmed in public documentation.
