CDBDSC51200-G

Overview

The CDBDSC51200-G is a Silicon Carbide (SiC) Schottky barrier rectifier manufactured by Comchip Technology. It features a maximum repetitive reverse voltage of 1200 V and an average rectified forward current of 18 A. The device exhibits a typical forward voltage of 1.45 V and a low reverse leakage current of 20 uA. Designed for surface-mount applications, it utilizes a compact DPAK package. The component supports a wide operating temperature range from -55°C to +175°C junction temperature, with a non-repetitive peak surge forward current rating of 50 A.

Feature Summary

• Utilizes Silicon Carbide (SiC) technology for high-temperature stability and efficiency
• Features a compact DPAK surface-mount package design
• Provides high breakdown voltage capability suitable for demanding power environments

Applications

• High-frequency switching power supplies
• Uninterruptible Power Supply (UPS) systems
• Industrial motor drives and inverters

Procurement Notes

Verify the specific datasheet version when sourcing, as specifications may vary between revisions. Confirm that the DPAK package dimensions match your PCB footprint requirements precisely. Ensure the supplier provides traceability documentation for the Silicon Carbide material quality. Check for any specific handling instructions related to ESD sensitivity during assembly processes.

Selection Notes

Select this component when high thermal performance and low forward voltage drop are critical for system efficiency. The 1200 V rating makes it suitable for medium-voltage AC/DC conversion stages. Consider the 18 A current capacity against your peak load requirements. The wide temperature range allows operation in harsh industrial environments without derating concerns.

Part Context

This part belongs to Comchip's CDB series of SiC Schottky diodes. It represents the company's expansion into wide-bandgap semiconductor solutions. The series targets applications requiring superior switching speeds and thermal resilience compared to traditional silicon rectifiers. It complements their broader portfolio of discrete power devices.

Replacement Considerations

Direct substitutes must match the 1200 V / 18 A SiC Schottky specification in a DPAK package. Verify equivalent forward voltage and reverse leakage characteristics to maintain circuit performance. Ensure thermal resistance values are comparable for reliable heat dissipation.