CDBDSC5650-G

Overview

The CDBDSC5650-G is a Silicon Carbide (SiC) Power Schottky Diode manufactured by Comchip Technology. It features a single configuration with a repetitive reverse voltage (Vrrm) of 650 V and an average forward current (If) of 5 A. The device exhibits a maximum forward voltage (Vf) of 1.35 V at rated conditions. Designed for high-efficiency power conversion, it utilizes a DPAK (TO-252-3) surface-mount package. The component is RoHS3 compliant and engineered to operate effectively under high-temperature conditions while maintaining ultra-low reverse leakage current.

Feature Summary

• Utilizes silicon carbide material for superior thermal performance and high-temperature operation
• Features low forward voltage drop to minimize conduction losses and enhance system efficiency
• Incorporates ultra-low reverse leakage current characteristics typical of SiC technology
• Designed for high-speed switching applications with robust surge capability

Applications

• High-efficiency DC-DC converters
• Uninterruptible power supplies (UPS)
• Solar inverters and photovoltaic systems
• Industrial motor drives and power factor correction circuits

Procurement Notes

Verify the specific datasheet revision when sourcing, as electrical parameters may be subject to change. Confirm that the procurement channel provides genuine Comchip Technology components to ensure reliability. Check for RoHS3 compliance status if environmental regulations are a constraint. Ensure the DPAK footprint matches the target PCB design before finalizing orders. Validate thermal management requirements based on the specified power dissipation limits.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities combined with low forward voltage loss. The 650 V rating suits medium-voltage power stages where silicon diodes would incur higher conduction penalties. Consider the DPAK package for its balance of current handling and board space optimization. Evaluate thermal resistance requirements against the expected ambient operating conditions to ensure safe junction temperatures during continuous operation.

Part Context

This part belongs to Comchip Technology's CDB Series of Silicon Carbide Schottky Barrier Diodes. The series is characterized by batch process designs that offer excellent power dissipation and improved thermal resistance compared to standard alternatives. These devices are intended for low-profile surface-mounted applications to optimize board space while delivering high current capability and guarding against overvoltage conditions in modern power electronics.

Replacement Considerations

Direct substitutes must match the 650 V reverse voltage, 5 A forward current, and TO-252-3 package. Verify that alternative SiC Schottky diodes from other manufacturers maintain comparable forward voltage and reverse leakage specifications to ensure circuit performance parity.