CDBFR0240

Overview

The CDBFR0240 is a silicon Schottky barrier diode manufactured by Comchip Technology, designed for surface-mount applications. It features a single configuration within an extremely thin, leadless 1005 (SOD-323F) package. The device supports a maximum average forward rectified current of 200 mA and offers a repetitive peak reverse voltage rating of 45 V. Key electrical characteristics include a low forward voltage drop of 450 mV at rated current and a minimal reverse leakage current of 1 uA. It withstands a forward surge current of 3 A and operates reliably within a junction temperature range up to +125°C.

Feature Summary

• Majority carrier conduction ensures ultra-fast switching speeds with negligible reverse recovery time.
• Extremely thin and leadless package design facilitates mounting on small surface areas.
• Low forward voltage drop contributes to high efficiency and reduced power loss.
• Gold-plated terminals provide solderability compliant with MIL-STD-750 standards.

Applications

• High-frequency rectification in compact consumer electronics
• Power supply input protection circuits
• Clamping and flyback diodes in low-voltage DC systems

Procurement Notes

Verify the specific suffix against official Comchip documentation to confirm exact packaging and environmental compliance status. Ensure the procurement channel provides valid traceability for RoHS certification. Confirm that the delivered components match the 1005/SOD-323F mechanical dimensions specified in the datasheet to prevent assembly issues.

Selection Notes

Select this component when space constraints require a leadless SMD footprint with low thermal mass. It is suitable for designs prioritizing low forward voltage to maximize efficiency in battery-powered or low-voltage logic circuits. Consider the 200 mA current limit and 45 V reverse voltage rating to ensure adequate margin for the target application's operating conditions.

Part Context

This part belongs to Comchip Technology's series of small-signal Schottky barrier diodes. These devices utilize silicon epitaxial planar chip technology to achieve superior performance compared to standard p-n junction rectifiers. The family focuses on miniaturization and high-speed switching capabilities for modern portable electronic devices.

Replacement Considerations

Cross-reference with other 1005 package Schottky diodes offering similar 200 mA and 40-45 V ratings. Verify pinout compatibility and thermal resistance characteristics before substitution. Ensure any alternative meets the same MIL-STD terminal plating requirements if harsh environment reliability is required.