CDBJSC101200-G

CDBJSC101200-G

  • Description:DIODE SIL CARB 1200V 10A TO220
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tube

SKU:80ab9224c6b3 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE SIL CARB 1200V 10A TO220
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io):10A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:100 µA @ 1200 V
  • Capacitance @ Vr, F:780pF @ 0V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2
  • Supplier Device Package:TO-220-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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CDBJSC101200-G

Overview

The CDBJSC101200-G is a Silicon Carbide (SiC) Schottky barrier rectifier manufactured by Comchip Technology. It features a single-phase configuration with a maximum repetitive peak reverse voltage of 1200 V and an average forward current rating of 1.0 A. The device utilizes SiC technology to achieve ultra-low reverse leakage current, enhancing efficiency in high-temperature environments. It is designed for fast switching applications with low power losses.

Feature Summary

  • Utilizes Silicon Carbide (SiC) material for superior thermal performance and high-temperature operation capabilities.
  • Features ultra-low reverse leakage current to improve overall system efficiency.
  • Designed for fast switching applications with minimal power loss.

Applications

  • High-frequency inverters
  • Free-wheeling diode circuits
  • Polarity protection systems

Procurement Notes

Verify the specific suffix 'G' indicates RoHS compliance status as per official documentation. Confirm the package type matches design requirements before integration. Ensure sourcing channels provide valid manufacturer traceability. Check for any recent Product Change Notifications that may affect specifications or manufacturing location.

Selection Notes

Select this component when high-voltage blocking capability combined with low forward current is required. The SiC construction makes it suitable for environments where silicon diodes would suffer from excessive leakage or thermal runaway. Consider the 1200V rating for robustness against voltage transients in industrial power supplies.

Part Context

This part belongs to Comchip's Silicon Carbide Schottky series, which specializes in high-efficiency rectification. Unlike standard silicon diodes, these components are engineered to maintain performance under elevated temperatures. The series addresses the need for reduced energy loss in modern power electronics.

Replacement Considerations

Direct substitutes must match the 1200V/1A SiC Schottky specification. Verify pinout compatibility if replacing with devices from other manufacturers. Ensure the alternative component meets the same thermal resistance and leakage current standards for equivalent circuit performance.

CDBJSC101200-GCDBJSC101200-G

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