CDBJSC101700-G

Overview

The CDBJSC101700-G is a Silicon Carbide (SiC) Power Schottky Diode manufactured by Comchip Technology. It features a maximum repetitive reverse voltage of 1700 V and an average forward current of 10 A. The device utilizes a TO-220-2 package for through-hole mounting. Key electrical characteristics include a low forward voltage drop typical of Schottky technology, high surge current capability, and operation at junction temperatures up to 150 °C. This component is designed for high-efficiency power conversion applications requiring robust performance under high-voltage conditions.

Feature Summary

• Utilizes Silicon Carbide (SiC) material for superior thermal stability and high-temperature operation
• Schottky barrier construction ensures low forward voltage drop and minimal switching losses
• High breakdown voltage rating suitable for demanding power electronics environments
• Robust mechanical design with isolated case configuration for effective heat dissipation

Applications

• High-power supply circuits
• Motor drive systems
• Industrial power inversion

Procurement Notes

Verify the specific datasheet version when sourcing, as manufacturers may update thermal or mechanical specifications over time. Confirm that the TO-220-2 package dimensions match your PCB footprint requirements. Ensure the supplier provides documentation confirming RoHS compliance status, as regulatory classifications can change. Cross-reference the part number with official manufacturer catalogs to confirm active lifecycle status before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities combined with low conduction losses. The SiC technology makes it suitable for applications where efficiency and thermal management are critical constraints. Consider the 10 A current rating against your peak load requirements and ensure adequate heatsinking is provided given the TO-220-2 package's thermal characteristics. Evaluate the reverse voltage margin relative to your system's maximum operating voltage.

Part Context

This diode belongs to Comchip Technology's CDBJSC series, which focuses on Silicon Carbide power devices. Unlike standard silicon rectifiers, SiC diodes offer faster switching speeds and higher temperature tolerance. The series targets industrial and automotive sectors where reliability under stress is paramount. The TO-220-2 form factor allows for easy integration into existing through-hole assembly processes while providing better thermal performance than surface-mount alternatives.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult official manufacturer substitution guides or equivalent technical specifications from other vendors when identifying alternative components.