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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 3A TO220F
- Series：-
- Mfr：Comchip Technology
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 3 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 650 V
- Capacitance @ Vr, F：190pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2 Full Pack
- Supplier Device Package：TO-220F
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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FAQ
Is the CDBJSC3650-G a verified component in the provided documentation?
No, there is no verified local source material or datasheet available for the specific part number CDBJSC3650-G.
Can generic Comchip Technology specifications be applied to this model?
No. Per strict verification rules, generic family data cannot be assumed for unverified part numbers.
