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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 1200V 5A TO220
- Series：-
- Mfr：Comchip Technology
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：5A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 5 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 1200 V
- Capacitance @ Vr, F：475pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The CDBJSC51200-G is a Silicon Carbide (SiC) Schottky barrier rectifier manufactured by Comchip Technology. It features a maximum repetitive peak reverse voltage of 1200 V and an average rectified forward current of 3 A to 5 A, depending on the specific datasheet source. The device utilizes a TO-247 package and operates with a junction temperature range from -55°C to 175°C. Key electrical characteristics include a reverse leakage current of 100 µA at 1200 V and zero reverse recovery time, ensuring ultra-fast switching capabilities suitable for high-efficiency power conversion applications.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for superior thermal performance and efficiency under high-temperature conditions.
- Features ultra-low reverse leakage current to enhance overall system efficiency.
- Provides zero reverse recovery time for ultra-high-speed switching operations.
- Includes guardring design for enhanced overvoltage protection.
Applications
- High-temperature power supply circuits
- High-frequency inverters
- Polarity protection in DC systems
Procurement Notes
Verify the specific package type and current rating against the official Comchip Technology datasheet before procurement, as sources indicate variations between TO-247 and other formats. Confirm RoHS compliance status and ensure the selected variant matches the required voltage and current specifications for the target application environment.
Selection Notes
Select this component for applications requiring high breakdown voltage and minimal switching losses. The SiC material allows for operation at higher junction temperatures compared to silicon alternatives. Ensure the thermal management design supports the specified operating range and that the reverse voltage rating exceeds the maximum circuit transient voltages.
Part Context
Comchip Technology specializes in surface-mount discrete semiconductors, including Schottky diodes and TVS protectors. The company pioneered standardized DFN/flat chip packaging with gold termination to eliminate tin-whisker potential. This product line emphasizes low profile designs and high reliability for modern electronic manufacturing processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit parameters if considering alternative manufacturers.
