ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 5A TO220F
- Series：-
- Mfr：Comchip Technology
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：5A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 5 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 650 V
- Capacitance @ Vr, F：430pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2 Full Pack
- Supplier Device Package：TO-220F
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Download product information
Overview
The CDBJSC5650-G is a Silicon Carbide (SiC) Power Schottky Diode manufactured by Comchip Technology. It features a 650 V reverse voltage rating and a 5 A forward current capability. The device operates within a temperature range of -55 °C to +175 °C, with a maximum junction temperature of 175 °C. Key electrical parameters include a 10 µA reverse leakage current and a 60 A non-repetitive peak forward surge current. The component utilizes a TO-220F through-hole package.
Feature Summary
- Utilizes silicon carbide epitaxial planar chip technology for superior thermal performance
- Features ultra-fast switching characteristics inherent to Schottky barrier rectifiers
- Provides high efficiency operation with low forward voltage drop
- Designed for high-temperature stability without thermal runaway
Applications
- Low voltage, high frequency inverters
- Free-wheeling diode circuits
- Polarity protection systems
Procurement Notes
Verify the specific suffix and package variant against the official Comchip Technology datasheet before ordering. Confirm that the TO-220F lead configuration matches your PCB footprint requirements. Ensure the 650V rating aligns with your circuit's peak inverse voltage demands. Check for any recent Product Change Notifications regarding material or manufacturing updates.
Selection Notes
Select this component when high-temperature operation up to 175 °C is required. The SiC material offers better thermal resistance compared to standard silicon alternatives. Consider the 60 A surge capability for inductive load switching. Verify that the through-hole mounting style fits the assembly constraints. Evaluate the reverse leakage current specifications for sensitive control circuits.
Part Context
This part belongs to the CDBJSC series of Silicon Carbide Power Schottky Diodes from Comchip Technology. The series is designed for power conversion applications requiring high reliability and efficiency. The CDBJSC5650-G specifically targets the 650V voltage class within this portfolio, offering a balance of current handling and voltage blocking capabilities.
Replacement Considerations
Consult official substitution guides for equivalent SiC Schottky diodes with matching 650V and 5A ratings. Verify pinout compatibility for TO-220F packages before replacing. Ensure thermal management solutions are adequate for the replacement device's power dissipation characteristics.
