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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 8A TO220-2
- Series：-
- Mfr：Comchip Technology
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：8A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 8 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 650 V
- Capacitance @ Vr, F：560pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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FAQ
Is the CDBJSC8650-G a Schottky diode?
No, the CDBJSC8650-G is not a Schottky diode. It is a dual N-Channel Enhancement Mode Field Effect Transistor (FET).
What is the primary function of the CDBJSC8650-G?
The CDBJSC8650-G functions as a dual N-Channel Enhancement Mode Field Effect Transistor.
