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The CDBMS1150-HF is a single Schottky barrier rectifier manufactured by Comchip Technology. It features a maximum average forward rectified current of 1 A and a repetitive peak reverse voltage of 150 V. The device utilizes silicon epitaxial planar chip technology with a metal-silicon junction. Key electrical parameters include a maximum forward voltage drop of 0.92 V and a maximum reverse leakage current of 50 uA. It supports a high surge current capability and operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet version for the CDBMS1150-HF to confirm RoHS compliance status, as documentation indicates transition periods. Ensure the ordering suffix matches the required packaging format, such as tape and reel or cut tape, as availability varies by distributor. Cross-reference the manufacturer part number directly with official Comchip Technology documentation to avoid substitution errors with similar series components.
Select this component when a low forward voltage drop and high efficiency are required in space-constrained designs. The SOD-123F package provides a compact footprint suitable for surface-mount assembly. Consider the 150 V reverse voltage rating for medium-voltage DC applications. Evaluate the thermal performance requirements against the device's power dissipation capabilities to ensure reliable operation under load conditions.
This component belongs to the CDBMS series of low-profile Schottky barrier rectifiers from Comchip Technology. The series is characterized by its thin package profile, which is significantly thinner than standard SOD-123 devices. This family focuses on providing excellent power dissipation and high current capability in a small form factor, targeting modern electronics requiring efficient rectification.
Publicly confirmed substitute part numbers for the CDBMS1150-HF were not identified in the provided source material. Verify compatibility with alternative Schottky diodes having matching 1 A current, 150 V voltage, and SOD-123F package specifications before implementation.