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The CG7264AMT is a radiation-hardened N-channel MOSFET from Infineon Technologies, designed for high-reliability environments. It features a 250 V breakdown voltage and a maximum on-resistance of 41 mΩ at 25°C. The device supports a continuous drain current of 28.5 A at 100°C and 45 A at 25°C, with a gate charge of 220 nC. It offers a total ionizing dose tolerance of up to 100 Krad(Si) and is available in a TO-254AA Low Ohmic package.
Verify the specific ordering suffix and package variant against the official Infineon datasheet to ensure compatibility with your system requirements. Confirm radiation hardness certification levels if required for your mission profile. Check for RoHS compliance status and availability of updated test reports for critical design-in phases.
Select this component when designing for environments requiring proven radiation tolerance and high current handling capabilities. Ensure the thermal management solution accommodates the specified current ratings at operating temperatures. Verify that the TO-254AA package fits within the mechanical constraints of the target assembly.
This part belongs to Infineon's portfolio of radiation-hardened discrete power devices, originally developed under International Rectifier. It is engineered for aerospace and defense sectors where standard commercial components fail due to ionizing radiation effects. The device complements other rad-hard solutions in motor control and power conversion architectures.
Consult official substitution lists for equivalent rad-hard MOSFETs with similar voltage and current ratings. Verify pinout compatibility and thermal performance metrics before replacing existing designs.