CGD65A055S2-T07

$14.08

Description：650V GAN HEMT, 55MOHM, DFN8X8. W
Series：ICeGaN™
Mfr：Cambridge GaN Devices
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9a5a1066ef05 Category: Single FETs, MOSFETs Brand: Cambridge GaN Devices

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Product introduction

Product Detailed Parameters

Description：650V GAN HEMT, 55MOHM, DFN8X8. W
Series：ICeGaN™
Mfr：Cambridge GaN Devices
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：12V
Rds On (Max) @ Id, Vgs：77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id：4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 12 V
Vgs (Max)：+20V, -1V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：Current Sensing
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：16-DFN (8x8)
Package / Case：16-PowerVDFN

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CGD65A055S2-T07

Overview

The CGD65A055S2 is an enhancement mode GaN-on-silicon power transistor featuring ICeGaN™ gate technology and integrated current sensing. It operates at 650 V with a typical on-resistance of 55 mΩ and supports continuous drain currents up to 27 A. The device utilizes a bottom-side cooled DFN package with an 8x8 mm² footprint, enabling high-frequency switching and efficient thermal management.

Feature Summary

ICeGaN™ gate technology provides broad gate voltage compatibility with standard silicon MOSFET drivers, eliminating the need for negative voltages or external clamping interfaces.
Integrated current sense function removes the requirement for external sense resistors, reducing efficiency losses and simplifying thermal design by allowing direct soldering to ground planes.
Kelvin source connection ensures accurate gate drive referencing, while the Miller clamp prevents unintended turn-on during fast switching transitions.

Applications

Server power supplies and data center power distribution
Telecom rectifiers and general-purpose SMPS
Totem pole and single-switch PFC converters
High-power Class-D audio amplifiers

Procurement Notes

Verify that the ordering suffix matches the required tape and reel packaging configuration. Confirm the specific revision level against the manufacturer's latest documentation to ensure compliance with updated electrical characteristics or pinout definitions prior to finalizing procurement orders.

Selection Notes

Select this component for designs requiring high switching frequencies and simplified gate drive integration. Ensure the application circuit accommodates the recommended gate drive voltage range of 9 V to 20 V. Verify that the PCB layout supports the bottom-side cooling requirements inherent to the DFN package structure.

Part Context

This device belongs to the ICeGaN™ product family from Cambridge GaN Devices. It represents an evolution in e-mode GaN technology by combining high-voltage capability with intelligent gate control and built-in diagnostics, targeting high-efficiency power conversion systems where size and thermal performance are critical constraints.