CLA4604-000

RF Diode Overview

The Skyworks CLA4604-000 is a silicon PIN limiter diode chip designed for passive receiver protection across frequencies from 100 MHz to over 30 GHz. It features a mesa construction with a 2.0 μm intrinsic region base width, optimized for low-level and cleanup applications within multi-stage limiter circuits. Key electrical specifications include a breakdown voltage range of 30 V to 60 V, a typical junction capacitance of 0.12 pF at 0 V bias, and a series resistance of 2.5 Ω measured at 10 mA forward current. The device exhibits a minority carrier lifetime of 7 ns and supports a maximum junction temperature of 175 °C.

RF Diode Feature Summary

• Mesa-constructed design providing low capacitance for broader bandwidth and faster response
• Tightly controlled I-layer base width ensuring strong limiting action and low insertion loss
• High resistivity silicon technology enabling robust performance in commercial and defense radar systems

RF Diode Applications

• LNA receiver protection
• Commercial radar systems
• Defense radar systems

RF Diode Procurement Notes

Verify the specific die package outline drawing required for integration, as the CLA4604-000 utilizes the 150-806 package configuration. Confirm that handling procedures align with Skyworks Application Note 200146 for waffle pack carriers or appropriate bonding methods outlined in document 200532. Ensure electrostatic discharge precautions are strictly followed during all handling and transport phases to prevent damage to the sensitive semiconductor structure.

RF Diode Selection Notes

Select the CLA4604-000 when designing multi-stage limiter circuits requiring low-level or cleanup stage performance. This part is suitable for applications demanding low insertion loss and fast recovery times. Compare its 2.0 μm base width against planar alternatives like the CLA4606-000 if higher power handling is required instead of ultra-low capacitance characteristics.

RF Diode Part Context

The CLA4604-000 belongs to the Skyworks CLA Series of silicon limiter diode bondable chips. It is specifically categorized among the mesa-constructed devices, which also includes the CLA4601-000, CLA4602-000, CLA4605-000, and CLA4611-000. These components are engineered to accommodate various stages of limiter applications through different intrinsic region widths and capacitance values.

RF Diode Replacement Considerations

The CLA4605-000 serves as a comparable alternative within the same mesa family, offering similar low-level performance characteristics but with a slightly higher junction capacitance of 0.20 pF compared to the 0.12 pF of the CLA4604-000.