CLA4609-086LF

RF Diode Overview

The CLA4609-086LF is a surface-mountable, low-capacitance, dual parallel, shunt-connected PIN limiter diode designed for high-power applications from 10 MHz to 6 GHz. It features a maximum resistance of 1.5 Ω at 100 mA and a maximum capacitance of 0.6 pF at 30 V. The device operates with a typical threshold level of +36 dBm and supports a reverse voltage of 250 V. Key electrical specifications include a carrier lifetime of 1.1 µs, an I-region width of 20 µm, and a junction-to-case thermal resistance of 25 °C/W. Maximum CW input power reaches 16 W (42 dBm), while peak pulsed input power is rated at +72 dBm.

RF Diode Feature Summary

• Dual parallel, shunt-connected architecture optimized for large signal limiter applications
• Low-profile ultra-miniature QFN package with exposed copper paddle for minimal thermal resistance
• High power handling capability with a typical threshold level of +36 dBm
• Low parasitic inductance and junction capacitance for effective receiver protection

RF Diode Applications

• Low-loss, high-power limiters
• Receiver protectors

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure compliance with RoHS standards and lead-free soldering requirements. Confirm that the procurement channel provides the standard tape and reel format intended for production quantities. Ensure all handling procedures adhere to industry-standard ESD precautions to prevent device damage during storage and assembly.

RF Diode Selection Notes

Select this component when designing circuits requiring robust protection against high-power RF signals within the 10 MHz to 6 GHz range. The dual parallel configuration allows for efficient shunt connection in 50 Ω lines. Consider the 25 °C/W thermal resistance and the necessity of multiple vias under the exposed paddle for optimal heat dissipation and electrical performance in dense PCB layouts.

RF Diode Part Context

This part belongs to Skyworks' series of surface-mount limiter diodes engineered for receiver protection. It utilizes silicon technology housed in a 3-pin, 2 x 2 mm QFN package. The design integrates an exposed copper paddle directly connected to the cathode to minimize thermal resistance between the I-layer and the system heat sink, ensuring reliable operation under high-power conditions.

RF Diode Replacement Considerations

The official evaluation board for this component is designated as CLA4609-86-EVB. No alternative substitute part numbers are documented in the provided datasheet.