CMJH180 TR PBFREE

Overview

The CMJH180 TR PBFREE is a surface mount silicon current regulator diode manufactured by Central Semiconductor Corp. It operates within the CMJH series, designed to provide constant current over a wide voltage range. The device features a nominal regulator current of 18 mA with a maximum peak operating voltage of 50 V and power dissipation of 500 mW. It utilizes an SOD-123FL epoxy molded case and supports junction temperatures from -65°C to +150°C.

Feature Summary

• Provides stable current regulation across a broad voltage spectrum
• Utilizes low-profile SOD-123FL surface mount packaging
• Engineered for high reliability in critical applications

Applications

• Constant current sources for field effect transistors
• Current limiting circuits requiring specific regulatory values
• Biasing networks for analog signal processing

Procurement Notes

Verify the exact part number against official manufacturer documentation to ensure correct series identification. Confirm RoHS compliance status and lead-free plating requirements prior to procurement. Cross-reference datasheet electrical characteristics with design specifications to validate performance under intended operating conditions.

Selection Notes

Select this component based on the required nominal regulator current of 18 mA and the 50 V peak operating voltage limit. Ensure the application environment remains within the specified -65°C to +150°C junction temperature range. Verify that the SOD-123FL package dimensions align with the target PCB layout constraints.

Part Context

This component belongs to the CMJ0130 through CMJH220 series of surface mount silicon current limiting diodes. The series offers various special selections of regulator currents tailored for critical applications. All devices share common thermal and mechanical characteristics while differing in specific electrical parameters.

Replacement Considerations

Direct substitutes must match the 18 mA nominal current, 50 V peak voltage, and SOD-123FL package. Verify equivalent dynamic impedance and temperature coefficient specifications before integration.