CMLDM8002AG TR PBFREE

CMLDM8002AG TR PBFREE

$0.88
  • Description:MOSFET 2P-CH 50V 0.28A SOT563
  • Series:-

SKU:dc43c012847e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 50V 0.28A SOT563
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:280mA
  • Rds On (Max) @ Id, Vgs:2.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:70pF @ 25V
  • Power - Max:350mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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CMLDM8002AG TR PBFREE

Overview

The CMLDM8002AG TR PBFREE is a surface-mount dual P-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It utilizes the USA pinout configuration within an SOT-563 package and is designed for high-speed pulsed amplifier and driver applications. The device features low on-resistance and logic-level compatibility, with a maximum drain-source voltage of 50V and continuous drain current of 280mA per transistor.

Feature Summary

  • Dual chip construction in a compact SOT-563 package
  • Logic level compatible with low threshold voltage
  • Optimized for fast switching performance

Applications

  • Load and power switches
  • Power supply converter circuits
  • Battery powered portable equipment

Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements. The 'TR' designation indicates reel packaging, while 'PBFREE' confirms lead-free plating. Ensure the selected variant matches the required pinout configuration for the target circuit design.

Selection Notes

Select this component for designs requiring dual P-channel MOSFETs in a small footprint. Consider the thermal resistance and power dissipation limits relative to the PCB copper pad area. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal conduction.

Part Context

This part belongs to the CMLDM8002A series of dual P-channel enhancement-mode MOSFETs. The AG suffix specifically denotes the USA pinout configuration and halogen-free manufacturing. Alternative variants include the AJ suffix for Japanese pinout configurations.

Replacement Considerations

Direct substitutes must match the SOT-563 package and dual P-channel topology. Verify pinout compatibility between USA and Japanese configurations before swapping parts.

CMLDM8002AG TR PBFREECMLDM8002AG TR PBFREE
$0.88
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