CMPDM7002AHC TR PBFREE

$0.60

Description：MOSFET N-CH 60V 1A SOT23
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ddd3be7491b2 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 1A SOT23
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：220mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 4.5 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：240 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

CMPDM7002AHC TR PBFREE

Overview

The CMPDM7002AHC is a surface-mount N-channel enhancement-mode silicon MOSFET in an SOT-23 package. It features a drain-source voltage of 60V and a continuous drain current of 1.0A. The device offers low on-resistance, with a maximum of 0.22Ω at VGS=10V and 0.30Ω at VGS=5.0V. Total gate charge is 2.3nC. Power dissipation is rated at 350mW, with an operating junction temperature range from -65°C to +150°C.

Feature Summary

High current capability designed for high-speed pulsed amplifier and driver applications
ESD protection up to 2kV
Low on-resistance for efficient switching performance
Industry standard SOT-23 surface mount package

Applications

Load and power switches
Power supply converter circuits
Battery powered portable equipment

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The PBFREE designation indicates lead-free compliance. Confirm that the requested variant matches the exact electrical characteristics and thermal ratings specified in the official datasheet before finalizing procurement specifications.

Selection Notes

Select this component when high-speed switching and moderate current handling are required in a compact form factor. The low gate charge and fast turn-on/turn-off times make it suitable for driver applications. Ensure the design accounts for the 350mW power dissipation limit and the specific thermal resistance of the SOT-23 package under steady-state conditions.

Part Context

This part is a high-current version of the 2N7002A enhancement-mode N-channel MOSFET. It shares the same industry-standard SOT-23 footprint but provides significantly higher continuous drain current compared to standard variants. The marking code for identification is 702H.

Replacement Considerations

Direct substitutes include the 2N7002A and CMPDM7002A. Verify that replacement parts meet the 1.0A continuous current requirement and the specific rDS(ON) thresholds if used in high-efficiency switching applications.