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Product Detailed Parameters
- Description：MOSFET P-CH 60V 2.4A SOT23-6
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：175mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.6 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：531 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-6
- Package / Case：SOT-23-6
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Overview
The CMS02P06T6-HF is a P-Channel MOSFET manufactured by Comchip Technology, designed for surface-mount applications in the SOT-23-6 package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 2.4 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 180 mΩ at a gate-source voltage of -10 V. Power dissipation is rated at 1.1 W, with an operating temperature range from -55°C to +150°C. Key electrical parameters include a gate charge of 7 nC and a threshold voltage ranging from 1 V to 2.5 V.
Feature Summary
- Utilizes advanced high cell-density trench technology for enhanced performance.
- Provides ultra-low gate charge to support efficient switching operations.
- Offers excellent cdv/dt immunity for stable operation in demanding environments.
Applications
- Power management circuits
- DC-DC converter designs
- Motor control systems
Procurement Notes
Verify the specific suffix and marking codes against the official Comchip Technology datasheet to ensure authenticity. Confirm that the component meets RoHS compliance requirements as stated in the manufacturer documentation. Cross-reference the part number with authorized distributors to validate supply chain integrity before procurement.
Selection Notes
Select this component for applications requiring a 60 V P-Channel MOSFET with low on-resistance. Ensure the thermal design accommodates the 1.1 W power dissipation rating within the specified temperature range. Verify that the gate drive voltage aligns with the -10 V specification for optimal Rds(on) performance.
Part Context
This component belongs to the single FET MOSFET category from Comchip Technology. It is part of a series utilizing trench technology for improved efficiency. The SOT-23-6 package allows for compact surface-mount integration in various electronic devices requiring reliable power switching capabilities.
Replacement Considerations
Consult official substitution guides for compatible parts. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.
