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The CMS80N06D-HF is an N-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a maximum drain-to-source voltage (VDS) of 60V and a continuous drain current (ID) of 14A at ambient temperature, rising to 80A at case temperature. The device utilizes surface-mount TO-252 (DPAK) packaging. Power dissipation ratings are specified as 2.5W at ambient temperature and 83W at case temperature. This component is designed for general-purpose switching applications requiring low on-resistance and high efficiency.
Verify the specific datasheet revision and electrical parameter tolerances against the manufacturer's official documentation before integration. Confirm that the TO-252 footprint matches the target PCB layout. Ensure thermal management solutions align with the specified power dissipation limits under actual operating conditions to maintain reliability.
Select this component when a 60V N-channel MOSFET is required in a DPAK package. Evaluate the trade-off between the 14A continuous current rating and thermal constraints. Compare on-resistance values with alternative devices if conduction losses are critical. Ensure the gate drive voltage supports full enhancement for optimal performance.
This part belongs to Comchip Technology's discrete semiconductor lineup, specifically within the MOSFET category. It serves as a standard switching element for low-voltage power electronics. The product designation indicates an N-channel configuration optimized for surface-mount assembly processes common in modern consumer and industrial electronic manufacturing.
The maximum drain-to-source voltage (VDS) is 60V.
It uses a Surface Mount TO-252 (DPAK) package.