CMUDM7001 TR PBFREE

$0.42

Description：MOSFET N-CH 20V 100MA SOT523
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d0279d3b55bb Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 100MA SOT523
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
Rds On (Max) @ Id, Vgs：3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.57 nC @ 4.5 V
Vgs (Max)：10V
Input Capacitance (Ciss) (Max) @ Vds：9 pF @ 3 V
FET Feature：-
Power Dissipation (Max)：250mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SC-89, SOT-490

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CMUDM7001 TR PBFREE

Overview

The Central Semiconductor CMUDM7001 TR PBFREE is a surface-mount N-channel enhancement-mode silicon MOSFET designed for high-speed pulsed amplifier and driver applications. It features low on-resistance and logic-level compatibility within an SOT-523 package. Key electrical parameters include a drain-source voltage of 20 V, continuous drain current of 100 mA (steady state) or 200 mA, and power dissipation of 250 mW at 25°C. The device operates across a junction temperature range of -65°C to +150°C.

Feature Summary

Logic level compatible design with low threshold voltage
Low rDS(ON) characteristics for efficient switching
Small SOT-523 surface mount package

Applications

Load and power switches
Power supply converter circuits
Battery powered portable equipment

Procurement Notes

Verify the End-of-Life status before procurement. This component has been transitioned to EOL status by Central Semiconductor. Orders may only be accepted from existing inventory or through Last Time Buy provisions. Confirm availability directly with the manufacturer's customer service representative as standard distribution channels may not stock this discontinued item.

Selection Notes

Select this component for compact designs requiring small signal N-channel switching. Ensure the application aligns with the 20V drain-source voltage limit and 250mW power dissipation rating. Consider the complementary CMUDM8001 if a P-channel equivalent is required for bridge configurations.

Part Context

This part belongs to the UltraMini series of surface-mount transistors manufactured using an N-Channel DMOS process. It is specifically engineered for applications demanding fast switching speeds and low drive requirements in space-constrained environments.