Transistor, Photovoltaic Output Optoisolators CNY17-4G product image

CNY17-4G

$0.20
  • Description:OPTOISO 5.3KV TRANS W/BASE 6-DIP
  • Series:CNY17-4
  • Mfr:Isocom Components 2004 LTD
  • Package:Tube

SKU:107cc17c1b53 Category: Brand:

  
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CNY17-4G is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Isocom Components 2004 LTD. Its product description is OPTOISO 5.3KV TRANS W/BASE 6-DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for CNY17-4G

  • Description:OPTOISO 5.3KV TRANS W/BASE 6-DIP
  • Series:CNY17-4
  • Mfr:Isocom Components 2004 LTD
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:5300Vrms
  • Current Transfer Ratio (Min):160% @ 10mA
  • Current Transfer Ratio (Max):320% @ 10mA
  • Turn On / Turn Off Time (Typ):6µs, 25µs
  • Rise / Fall Time (Typ):4.6µs, 15µs
  • Input Type:DC
  • Output Type:Transistor with Base
  • Voltage - Output (Max):70V
  • Current - Output / Channel:50mA
  • Voltage - Forward (Vf) (Typ):1.2V
  • Current - DC Forward (If) (Max):60 mA
  • Vce Saturation (Max):400mV
  • Operating Temperature:-55°C ~ 100°C
  • Mounting Type:Through Hole
  • Package / Case:6-DIP (0.400", 10.16mm)
  • Supplier Device Package:6-DIP
  • Grade:-
  • Qualification:-

Transistor, Photovoltaic Output Optoisolators datasheet and documents for CNY17-4G

CNY17-4G

Transistor, Photovoltaic Output Optoisolators Overview

The CNY17-4G is a single-channel optocoupler manufactured by Isocom Components 2004 LTD. It features an infrared emitting diode coupled with an NPN silicon phototransistor having a base terminal for improved switching performance. The device utilizes a 6-pin DIP through-hole package. Key electrical specifications include a maximum forward voltage of 1.65V, a maximum input current of 60 mA, and an isolation voltage of 5.3 kVrms. The typical rise time is 4.6µs and the typical fall time is 15µs. The current transfer ratio ranges from a minimum of 160% to a maximum of 320%.

Transistor, Photovoltaic Output Optoisolators Feature Summary

  • Integrates an infrared LED with an NPN silicon phototransistor featuring a base connection for enhanced control.

Transistor, Photovoltaic Output Optoisolators Applications

  • Signal isolation in digital communication circuits
  • Switching applications requiring high isolation voltage

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix 'XG' against official Isocom documentation to confirm pinout compatibility and packaging details. Ensure the selected variant matches the required current transfer ratio range of 160% to 320%. Confirm that the 6-pin DIP form factor aligns with the target PCB layout constraints before finalizing procurement.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when a phototransistor output with a base terminal is required for faster switching or better linearity compared to standard configurations. The 5.3 kVrms isolation rating supports applications demanding robust galvanic separation between input and output circuits within a standard DIP footprint.

Transistor, Photovoltaic Output Optoisolators Part Context

This part belongs to the CNY17 series of optocouplers, which are widely used for general-purpose signal isolation. The CNY17-4G variant specifically denotes a particular binning of the current transfer ratio, distinguishing it from other models like the CNY17-1 or CNY17-2 based on its gain characteristics.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

Direct substitutes may include other CNY17 variants such as CNY17-1 or CNY17-2, provided their respective current transfer ratios meet the circuit requirements. Verify pin compatibility and isolation voltage ratings when considering alternative manufacturers' equivalents.

CNY17-4GCNY17-4G
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