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CNY65B
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Product Detailed Parameters
- Description：OPTOISOLTR 8.2KV 1CH TRANS 4-DIP
- Series：-
- Mfr：Vishay Semiconductor Opto Division
- Package：Tube
- Number of Channels：1
- Voltage - Isolation：8200Vrms
- Current Transfer Ratio (Min)：100% @ 10mA
- Current Transfer Ratio (Max)：200% @ 10mA
- Turn On / Turn Off Time (Typ)：5µs, 3µs
- Rise / Fall Time (Typ)：2.4µs, 2.7µs
- Input Type：DC
- Output Type：Transistor
- Voltage - Output (Max)：32V
- Current - Output / Channel：50mA
- Voltage - Forward (Vf) (Typ)：1.25V
- Current - DC Forward (If) (Max)：75 mA
- Vce Saturation (Max)：300mV
- Operating Temperature：-55°C ~ 85°C
- Mounting Type：Through Hole
- Package / Case：4-EDIP (0.300", 7.62mm)
- Supplier Device Package：4-DIP
- Grade：-
- Qualification：-
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Overview
The CNY65B is a single-channel transistor output optocoupler manufactured by Vishay Semiconductor Opto Division. It features an NPN phototransistor coupled to a gallium arsenide infrared-emitting diode within a DIP-4 package. The device provides high isolation voltage of 8200 Vrms and supports a maximum collector current of 50 mA with a collector-emitter voltage of 32 V. The current transfer ratio ranges from 100% to 200%, while the forward current is rated at 75 mA. Operating temperatures span from -55°C to +85°C, with power dissipation capped at 250 mW.
Feature Summary
- Provides galvanic isolation between input and output circuits using optical coupling technology.
- Features high insulation voltage capability for safe signal transmission across potential differences.
- Utilizes a standard through-hole DIP-4 package for easy integration into printed circuit boards.
Applications
- Signal isolation in industrial control systems
- Switching applications requiring electrical separation
- Microprocessor interface circuits
Procurement Notes
Verify component authenticity against official Vishay datasheets before integration. Confirm that the specific batch meets RoHS compliance requirements if mandated by project specifications. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity and performance reliability.
Selection Notes
Select this component when high isolation voltage is required alongside standard phototransistor output characteristics. Consider the DIP-4 form factor for through-hole mounting constraints. Evaluate thermal management needs given the 250 mW power dissipation limit and operating temperature range to ensure stable operation under load conditions.
Part Context
The CNY65B belongs to the CNY series of optocouplers, which includes variants like CNY64 and CNY66. These components share similar structural designs but may differ in specific electrical parameters or packaging options. This model specifically targets applications needing robust isolation with moderate speed response times typical of phototransistor outputs.
Replacement Considerations
Cross-reference with CNY65ABST for surface-mount alternatives within the same family. Verify pinout compatibility and electrical parameter alignment before substituting to ensure circuit functionality remains unaffected during replacement scenarios.
