CP226V-2N4393-CT20

Overview

The CP226V-2N4393 is a silicon N-channel JFET bare die designed for analog switching and chopper applications. It features a die size of 20 x 17 mils with a thickness of 7.1 mils. The device supports gate-drain and gate-source voltages up to 40 V, with an operating junction temperature range from -65°C to +150°C. Electrical characteristics include a drain-to-source saturation current (IDSS) ranging from 5.0 mA to 30 mA at VDS=20V, and a gate-to-source cutoff voltage (VGS(OFF)) between 0.5 V and 3.0 V. The component exhibits low input capacitance, with Ciss typically at 20 pF and Crss at 3.5 pF.

Feature Summary

• Silicon N-channel JFET structure optimized for analog switching and chopper circuits
• Hermetically sealed equivalent performance in bare die format suitable for high-reliability packaging
• Low noise and fast switching capabilities with minimal gate leakage current

Applications

• Analog switching designs
• Chopper amplifier circuits
• Commutator applications

Procurement Notes

Verify the specific packing option required for the project, such as unsawn wafer, sawn wafer on plastic ring, or singulated die in waffle pack trays. Confirm plating requirements by checking if the suffix indicates Tin/Lead or Lead-Free finishes. Ensure that the ordering suffix matches the desired mechanical configuration and testing standards provided in the datasheet.

Selection Notes

Select this component when a small signal N-channel JFET is needed for low-noise analog applications. Consider the bare die form factor for custom packaging solutions where space constraints or thermal management require direct die attachment. Verify that the IDSS and VGS(OFF) ranges align with the circuit's biasing requirements and that the 40V breakdown ratings are sufficient for the intended voltage levels.

Part Context

This part is a bare die version of the standard 2N4393 N-channel JFET. While the 2N4393 is commonly available in through-hole TO-18 packages, the CP226V variant provides the semiconductor die itself. This allows designers to integrate the transistor into hybrid microcircuits or custom packages tailored for specific military or aerospace environments.

Replacement Considerations

Direct replacement requires access to the same bare die form factor. Standard packaged equivalents like the 2N4393 or PN4393 can be used if the application permits discrete components. For bare die replacements, verify compatibility with existing wire bonding pads and metallization schemes.