CP771-CXDM4060P-WN

Description：MOSFET P-CH 40V 6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk

SKU:719dbf6e4560 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：65mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.5 nC @ 4.5 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP771-CXDM4060P-WN

Overview

The CP771-CXDM4060P-WN is a bare die P-Channel MOSFET manufactured by Central Semiconductor Corp. It features a 55 x 32 mil die size and 7.5 mil thickness, packaged as an unsawn wafer (WN). The device operates with a drain-source voltage of 40 V and continuous drain current of 6.0 A. Electrical characteristics include a gate-source voltage rating of 25 V, threshold voltage ranging from 1.0 to 3.0 V, and on-resistance values between 48 and 95 mΩ depending on drive conditions. Total gate charge is typically 6.5 nC at 4.5 V gate drive.

Feature Summary

Ultra-low profile geometry enabled by 7.5 mil die thickness for efficient wire bonding attachment
Optimized top metalization suitable for standard die attach technologies
Low on-resistance and low gate charge characteristics maximize operational efficiency
High drain current density suitable for power management applications

Applications

Power management circuits
Load switching systems
Motor drives
DC-DC conversion modules

Procurement Notes

Verify the specific suffix requirement when ordering. The WN suffix denotes an unsawn full wafer where reject die are inked. Ensure compatibility with existing CP771 wafer processes, noting that this process is classified as End of Life. Confirm replacement availability through authorized channels or engineering support if transitioning to newer wafer processes.

Selection Notes

Select this component for designs requiring a bare die P-Channel MOSFET with high current density and low profile constraints. Evaluate thermal management requirements based on the specified junction temperature range of -55 to +150 °C. Consider the electrical parameters such as rDS(ON) and Qg(tot) to ensure compatibility with the intended drive circuitry and switching frequencies.

Part Context

This part belongs to the CP771 wafer process family produced by Central Semiconductor Corp. The CP771 process is officially discontinued and classified as End of Life. The manufacturer has transitioned production to the CP805 wafer process as a replacement technology. This product is designed for integration into custom packages via wire bonding techniques.

Replacement Considerations

The official replacement for the CP771-CXDM4060P-WN is the CP805-CXDM4060P-WN. Designers should verify mechanical and electrical compatibility when migrating from the discontinued CP771 wafer process to the new CP805 process.