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The onsemi CPH3426-TL-E is an N-channel MOSFET designed for surface mount applications. It features a CPH package with dimensions of 2.9 x 1.6 x 0.9 mm. The device supports a maximum drain-source voltage of 40 V and a continuous drain current of 5 A. Key electrical parameters include a maximum power dissipation of 900 mW, a maximum gate-source voltage of ±6 V, and a maximum operating temperature of +150 °C. It utilizes a single transistor configuration optimized for low-voltage drive series requirements.
Verify the specific datasheet revision and ordering suffix to ensure compatibility with design requirements. Confirm package markings and pinout configurations against official documentation before integration. Ensure supply chain sources provide authentic components from authorized distributors to maintain reliability standards.
Select this component for designs requiring a 40 V N-channel MOSFET in a small CPH footprint. Evaluate thermal management needs given the 900 mW power dissipation limit. Compare on-resistance and gate charge specifications against alternative devices to optimize efficiency in low-voltage drive systems.
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the single FET category. It complements the manufacturer's broader range of power solutions aimed at industrial and automotive markets. The CPH package is part of their strategy to provide high-density mounting options for modern electronic assemblies.
Consult official substitution guides for verified equivalents. Cross-reference pinouts and electrical ratings carefully when considering alternatives.