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Product Detailed Parameters
- Description：MOSFET N-CH 250V 350MA 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：6.5Ohm @ 170mA, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.1 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CPH3461-TL-H is a single N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 250 V and a continuous drain current of 0.35 A. The device incorporates a built-in diode within its configuration. It utilizes the SC-59 package, also identified as TO-236 or JESD-95 code, with three pins. The maximum drain-source on-resistance is specified at 7.2 Ω.
Feature Summary
- Single N-channel enhancement mode MOSFET structure
- Integrated built-in diode configuration
- High voltage capability up to 250 V
Applications
- High voltage switching applications
- Power management circuits requiring integrated protection
- General purpose discrete semiconductor switching
Procurement Notes
Verify the specific suffix TL-H against official datasheets to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead time requirements directly with authorized distributors or the manufacturer. Ensure the SC-59 footprint matches the target PCB design constraints before finalizing procurement orders.
Selection Notes
Select this component for designs requiring high voltage isolation in a compact surface-mount form factor. The integrated diode simplifies circuit topology by eliminating external components. Evaluate the 7.2 Ω on-resistance against thermal dissipation requirements for the intended load current of 0.35 A to ensure reliable operation under expected duty cycles.
Part Context
This part belongs to the onsemi discrete MOSFET portfolio, specifically designed for space-constrained high-voltage applications. The CPH series typically targets efficient power switching solutions where small outline packages like SC-59 are preferred over larger through-hole alternatives. It serves as a standalone switching element rather than a complex integrated driver.
Replacement Considerations
Cross-reference with other onsemi N-channel MOSFETs in the SC-59 package offering similar 250 V ratings. Verify pinout compatibility and electrical parameters such as Rds(on) and breakdown voltage when substituting with equivalent parts from other manufacturers.
