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The CPH5504-TL-E is a dual NPN bipolar junction transistor in the CPH5 surface-mount package. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 50 V. The device has a total power dissipation of 1.2 W at 25°C ambient temperature on a ceramic board, with a junction temperature limit of 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 100 mA and a typical gain-bandwidth product (fT) of 380 MHz. The package dimensions are 2.9 mm x 1.6 mm x 0.9 mm.
Verify the specific ordering suffix TL-E against official documentation to confirm the tape-and-reel packaging format and lead-free status. Ensure that the procurement specifications align with the manufacturer's current production status and environmental compliance requirements before finalizing orders.
Select this component when a compact dual NPN solution is required for high-current switching tasks. The low saturation voltage and high current gain make it suitable for driving loads where efficiency and space constraints are critical factors in the circuit design.
This part belongs to the CPH5504 series of composite bipolar transistors manufactured by onsemi. It utilizes the CPH5 package, which is equivalent to JEITA/JEDEC standards SC-74A and SOT-25. The device integrates two chips, each functionally equivalent to the CPH3205, into a unified structure.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs by comparing pin configurations, absolute maximum ratings, and thermal characteristics if considering alternative components.
Pin 1 is Collector, Pin 2 is Collector, Pin 3 is Base, Pin 4 is Common Emitter, and Pin 5 is Base.
The maximum continuous collector current is 3 A, with a pulse collector current rating of 6 A.
The typical gain-bandwidth product (fT) is 380 MHz under conditions of VCE=10V and IC=500mA.