SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi CPH5524-TL-E is a complementary dual bipolar transistor housed in a surface-mount CPH5 package. It integrates one NPN and one PNP transistor to facilitate high-density mounting. The device supports a maximum collector current of 3 A with a pulse rating of 6 A. Key electrical parameters include a collector-to-emitter voltage (VCEO) of 50 V, a collector-to-base voltage (VCBO) of 100 V, and an emitter-to-base voltage (VEBO) of 6 V. The DC current gain (hFE) ranges from 200 to 560 at 100 mA, while the gain-bandwidth product (fT) is typically 380 MHz at 500 mA. Total power dissipation is rated at 1.2 W when mounted on a ceramic board.
Verify the specific ordering suffix TL-E against official documentation to confirm the tape-and-reel shipping format and lead-free status. Ensure that the required minimum packing quantity of 3,000 pieces per reel aligns with production volume requirements. Confirm compliance with RoHS directives prior to final procurement decisions.
Select this component for applications requiring matched complementary switching characteristics in a compact footprint. Evaluate thermal management strategies carefully, as total power dissipation is limited to 1.2 W under standard mounting conditions. Verify that the 50 V collector-to-emitter voltage rating exceeds the maximum operating voltage of the target circuit.
This part belongs to the CPH5524 series of low VCE(sat) complementary dual transistors manufactured by onsemi. The CPH5 package corresponds to JEITA and JEDEC standards SC-74A and SOT-25. The series is designed specifically for high-density mounting in portable and space-constrained electronic devices.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for cross-reference data before considering alternative components.