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Product Detailed Parameters
- Description：MOSFET P-CH 60V 4A 6CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-CPH
- Package / Case：SOT-23-6
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Overview
The CPH6354-TL-H is a single-channel P-Channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-26-6 surface-mount package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 4 A. Its maximum gate-source voltage rating is ±20 V, with a threshold voltage of 1.2 V. The component exhibits a low on-resistance of 145 mΩ and a gate charge of 14 nC. It operates within a temperature range of -55°C to +150°C and has a power dissipation capacity of 1.6 W.
Feature Summary
- Single-channel P-Channel configuration for efficient switching applications
- Low on-resistance design to minimize conduction losses
- Enhanced thermal stability supporting high junction temperatures
Applications
- Power management circuits requiring P-Channel switching
- Low-side or high-side load switch implementations
- General-purpose signal and power isolation tasks
Procurement Notes
Verify the specific suffix TL-H against official datasheets to confirm pinout and electrical characteristics, as variations exist within the CPH series. Confirm availability status directly with onsemi or authorized distributors, as lifecycle changes may affect supply continuity. Ensure compliance with RoHS and REACH requirements for your target market before finalizing procurement decisions.
Selection Notes
Select this component when a robust P-Channel MOSFET with moderate current handling and high voltage tolerance is required in a compact SOT-26-6 footprint. Compare its 145 mΩ on-resistance and 4 A current rating against circuit demands to ensure adequate performance margins. Consider the 60 V breakdown voltage for systems operating near this potential limit.
Part Context
This part belongs to onsemi's CPH series of small-signal MOSFETs, designed for space-constrained applications. The CPH6354 variant specifically targets P-Channel needs, offering a balance between switching speed and drive simplicity. It complements N-Channel options in the same family for complementary bridge or push-pull configurations.
Replacement Considerations
Consult onsemi documentation for direct cross-references. Verify pin compatibility and electrical parameters such as Rds(on) and Vgs(th) when evaluating alternative P-Channel MOSFETs from other manufacturers.
