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Product Detailed Parameters
- Description：SINGLE P-CHANNEL POWER MOSFET, -
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：169mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：172 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-CPH
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The CPH6355-TL-W is a single-channel P-Channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-26-6 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 3 A. Key electrical characteristics include a maximum on-resistance of 169 mOhms, a gate-source voltage range of ±20 V, and a threshold voltage of 2.6 V. The total gate charge is specified at 3.9 nC. Power dissipation capability is rated at 1.6 W, with an operating temperature range spanning from -55 °C to +150 °C.
Feature Summary
- Designed for low-voltage drive applications with optimized gate threshold characteristics.
- Provides efficient power switching through low on-resistance performance in a compact footprint.
- Engineered for high-temperature reliability suitable for demanding industrial environments.
Applications
- Low-side or high-side load switching circuits
- Power management units requiring P-channel control
- Industrial automation signal isolation
Procurement Notes
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS and REACH compliance documentation prior to integration. Validate package marking against official datasheet specifications to prevent counterfeit substitution. Ensure storage conditions maintain moisture sensitivity levels according to manufacturer guidelines.
Selection Notes
Select this component when a P-channel configuration is required with a 30 V rating and 3 A current capacity. The SOT-26-6 package offers a balance between thermal performance and board space efficiency. Consider the 169 mOhm on-resistance for conduction loss calculations in low-voltage applications.
Part Context
This part belongs to the CPH6355 series of power MOSFETs from onsemi. It represents a specific variant within the broader portfolio of discrete semiconductor devices designed for general-purpose switching and amplification tasks in consumer and industrial electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' components.
