CPH6413-TL-E

$0.09

Description：NCH 2.5V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk

SKU:f9b7e9c8b4c5 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH 2.5V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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CPH6413-TL-E

Overview

The CPH6413-TL-E is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a compact SOT-363 surface-mount package. The device features a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 3 A. Key electrical parameters include a low on-resistance (Rds(on)) of 25 mΩ at a gate-source voltage of 4.5 V, and a gate threshold voltage (Vgs(th)) ranging from 0.8 V to 2.0 V. The component supports a maximum power dissipation of 750 mW and operates within a temperature range of -55°C to +150°C.

Feature Summary

Dual configuration integrates two independent N-channel MOSFETs into a single compact package for space-constrained designs.
Low on-resistance characteristics enable efficient power switching with minimal conduction losses.
Enhanced thermal performance allows reliable operation at elevated junction temperatures up to 150°C.

Applications

DC-DC converter circuits requiring compact dual-switch topologies
Load switching applications in portable consumer electronics
Power management modules in automotive infotainment systems

Procurement Notes

Verify the specific suffix TL-E against the official datasheet to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMT assembly processes for the SOT-363 footprint. Cross-reference RoHS compliance documentation for material restrictions. Confirm that the 20 V rating aligns with system voltage requirements under all operating conditions.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. The 20 V rating suits low-voltage logic-level applications. Compare Rds(on) values at relevant gate voltages against alternatives. Consider the 3 A current capability relative to thermal constraints in the final enclosure design.

Part Context

This part belongs to onsemi's CPH series of small-signal MOSFETs designed for high-efficiency switching. The series emphasizes low profile and thermal efficiency for modern electronic devices. The CPH6413 variant specifically targets applications needing dual switches in a tiny form factor.

Replacement Considerations

Consult official substitution guides for equivalent dual N-channel MOSFETs in SOT-363 packages. Verify pinout compatibility and electrical parameter overlaps before replacement.