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Product Detailed Parameters
- Description：MOSFET N-CH 12V 2.9A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：44mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.6 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：291 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD13383F4T is a single N-channel enhancement-mode MOSFET from the FemtoFET series, manufactured by Texas Instruments. It features a maximum drain-source voltage of 12 V and a continuous drain current of 2.9 A. The device utilizes a PICOSTAR-3 surface-mount package with dimensions of 1.04 mm in length, 0.64 mm in width, and 0.35 mm in height. Key electrical parameters include a maximum on-resistance of 65 mΩ, a typical gate charge of 2 nC at 0 V, and a power dissipation rating of 500 mW. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Ultra-small PICOSTAR-3 footprint designed for high-density PCB layouts
- Low on-resistance optimized for efficient power switching applications
- Enhanced thermal performance supporting operation up to 150 °C junction temperature
Applications
- Portable consumer electronics requiring minimal board space
- Battery-powered devices utilizing low-voltage power management
- DC-DC converter circuits in compact form factors
Procurement Notes
Verify the specific suffix 'F4T' against official datasheets to confirm packaging configuration, as ordering suffixes may indicate variations in reel or tape specifications without altering the component's electrical function. Ensure compatibility with standard SMD reflow processes.
Selection Notes
Select this component when strict spatial constraints necessitate the PICOSTAR-3 package while maintaining a 12 V breakdown voltage. It serves as a suitable alternative to larger packages if the 2.9 A current rating and 65 mΩ resistance meet the circuit requirements.
Part Context
This part belongs to the FemtoFET family, which focuses on miniaturization for portable applications. It complements other variants like the CSD13381F4T and CSD13385F5, offering different current and resistance trade-offs within the same 12 V N-channel architecture.
Replacement Considerations
Compatible substitutes within the same series include CSD13381F4T (2.1 A) and CSD13385F5 (7.1 A). Verify that the replacement's Rds(on) and current ratings align with the original design specifications.
